Micro-Star International MS-7640 Notice D'installation page 38

MS-7640 Mainboard
▶ DRAM Frequency
This item is used to adjust the DRAM frequency. Setting to [Auto], the system will detect
the DRAM Frequency automatically.
▶ Adjusted DRAM Frequency
It shows the adjusted Memory frequency. Read-only.
▶ DRAM Timing Mode
This field has the capacity to automatically detect the DRAM timing.
▶ Advanced DRAM Configuration
Press <Enter> to enter the sub-menu.
▶ Command Rate
This setting controls the DRAM command rate.
▶ tCL
This controls the CAS latency, which determines the timing delay (in clock cycles)
before SDRAM starts a read command after receiving it.
▶ tRCD
When DRAM is refreshed, both rows and columns are addressed separately. This
setup item allows you to determine the timing of the transition from RAS (row address
strobe) to CAS (column address strobe). The less the clock cycles, the faster the
DRAM performance.
▶ tRP
This setting controls the number of cycles for Row Address Strobe (RAS) to be
allowed to precharge. If insufficient time is allowed for the RAS to accumulate its
charge before DRAM refresh, refreshing may be incomplete and DRAM may fail
to retain data. This item applies only when synchronous DRAM is installed in the
system.
▶ tRAS
This setting determines the time RAS takes to read from and write to memory cell.
▶ tRTP
Time interval between a read and a precharge command.
▶ tRC
The row cycle time determines the minimum number of clock cycles a memory row
takes to complete a full cycle, from row activation up to the precharging of the active
row.
▶ tWR
Minimum time interval between end of write data burst and the start of a precharge
command. Allows sense amplifiers to restore data to cells.
▶ tRRD
Specifies the active-to-active delay of different banks.
▶ tWTR
Minimum time interval between the end of write data burst and the start of a column-
read command. It allows I/O gating to overdrive sense amplifiers before read
command starts.
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